地面高精度磁法在青海大沙龙铁矿勘查中的应用

大沙龙铁矿区位于北祁连洋壳沉积带西段,走廊南山复背斜轴部南翼。属北祁连Cu-Pb-Zn-Fe-Cr-Au-Ag硫铁矿—石棉成矿带。区内广泛分布有奥陶纪火山沉积岩,岩层褶皱紧密,断裂发育,其西南侧为柴达诺山花岗岩体,矿区内有较多脉岩分布。据钻孔资料,深部见隐伏超基性岩体。根据大沙龙铁矿床特征及矿石中有用组分和伴生元素的特点,在前人工作成果的基础上,以地质工作与物探工作相结合的勘查手段,配以山地工程及各项分析测试手段,较全面系统地评价大沙龙矿床。地磁异常反演解释及钻探深部验证是找矿发现的关键。     

错果错-虾姑蛇绿混杂岩复理石沉积时代:来自改则县虾姑一带碎屑锆石的制约

错果错-虾姑蛇绿混杂带位于狮泉河-永珠-嘉黎蛇绿混杂岩带中段,与其伴随的复理石是其洋盆沉积的记录,它的时代归属对约束狮泉河-永珠-纳木错弧后小洋盆的演化具有重要意义。本文以狮泉河-永珠-嘉黎蛇绿混杂岩带中段改则县错果错-虾姑蛇绿混杂带虾姑一带的碎屑岩为研究对象,对其进行岩石学和碎屑锆石年代学方面的研究。该区碎屑岩以薄层砂岩和页岩互层为主,具复理石沉积特征。砂岩碎屑锆石年代学分析结果显示,最小碎屑锆石年龄为119Ma,最小年龄峰值为120Ma,指示该地区碎屑岩的时代为早白垩世晚期。结合前人研究,在早白垩世晚期,北部的班公湖-怒江残余洋向南俯冲,南部的雅江洋向北俯冲,加快了中部狮泉河-永珠-纳木错小洋盆俯冲消减,冈底斯岛弧与喀喇昆仑-南羌塘-左贡陆块发生弧-陆碰撞,形成了规模有限的狮泉河-永珠-嘉黎蛇绿岩及早白垩世晚期残留海盆地,在虾姑一带沉积了虾姑碎屑岩,随后闭合,之后沉积了早白垩世末的多尼组和郞山组残海沉积。     

快速成型中STL模型直接切片新算法研究

提出基于快速成型中STL模型直接切片新算法。读取二进制STL模型信息,创建三角面片矩阵;采用二分查找算法实现三角面片与切平面相交分组;再对每一组中三角面片与相交切平面求其交点获得相交线段,去除相交线段间的冗余节点;最后用深度优先搜索算法对切平面中相交线段优化创建轮廓线路径。此算法避免了切平面与三角面片位置关系的判断和建立三角面片之间拓扑信息关系,在切片耗时上具有明显的优势。     

Ni0.4Zn0.2Mn0.4Ce0.06Fe1.94O4表面原位构筑纳米羰基铁的可控制备及吸波性能研究

采用MOCVD工艺在微米级Ni_0.4Zn_0.2Mn_0.4Ce_0.06Fe_1.94O₄(NZMCF)表面原位生长了纳米级羰基铁(CI)壳层,通过控制沉积温度,调控核壳形貌和吸波性能,得到了具有核壳结构的NZMCF -CI复合吸波剂,利用XRD、SEM、EDS及VNA等分析手段,重点研究了沉积温度对NZMCF -CI核壳粉体微观形貌、晶体结构、电磁参数及吸波性能的影响。结果表明：通过调节沉积温度,可以有效调控核壳粉体的形貌,进而调控吸波性能。沉积温度为220 ℃,NZMCF-CI核壳粉体具有最佳的形貌及吸波性能。利用测得的同轴环样品的电磁参数,计算出NZMCF -CI涂层在厚度为1.8 mm时,反射率最小值为-39.9 dB,小于-10 dB的吸波带宽为14.2 GHz(3.8~18 GHz)。涂层厚度为0.8~2.6mm时,在3.2~ 18 GHz均能实现最小反射率低于-20 dB,在2.5~18 GHz均能实现最小反射率低于-10 dB。仅需要调整厚度,即可以实现2~18 GHz内良好的吸波效果。     

Ga含量对Al-Mg-Ga-Sn合金组织和降解性的影响

采用电炉熔炼制备了不同Ga含量的Al-Mg-Ga-Sn合金。通过光学显微镜(OM) 、扫描电镜(SEM)和X射线衍射仪(XRD)对其显微组织的形貌和成分进行了表征;在30℃、40℃、70℃、90℃的纯水中进行降解速率的测定;采用电化学工作站测试了室温电化学性能。结果表明：Al-Mg-Ga-Sn合金在Mg+Sn为定值10wt.%的情况下,Ga含量分别为0 wt.%、4 wt.%、8 wt.%、12 wt.%、16 wt.%时,合金组织均有铝基体相和Mg<sub>2</sub>Sn相,且随着Ga含量的增加合金组织中出现了Ga<sub>5</sub>Mg<sub>2</sub>相。Al-Mg-Ga-Sn合金的降解性特点是主要由铝基体相中点蚀开启,由Mg<sub>2</sub>Sn和Ga<sub>5</sub>Mg<sub>2</sub>化合物相的晶间腐蚀加速;不同Ga含量合金的起始降解温度由固溶于铝基体中的低熔点元素(Ga+Sn)的含量决定;相同Ga含量的合金随温度升高降解速率加快,降解反应动力学遵从阿伦尼乌斯公式。室温电化学分析表明：Al-Mg-Ga-Sn合金随Ga含量增加,腐蚀电位不同程度地负移,腐蚀电流逐渐增大。     

超声辅助对共沉淀法制备富锂锰基正极材料Li[Li_0.144Ni_0.136Co_0.136Mn_0.544]O₂性能影响的研究

通过超声辅助共沉淀法成功制备了富锂锰基正极电极材料,研究了不同的超声时间对材料形貌、结构和电化学性能的影响。研究发现,超声辅助能够使材料颗粒更加均匀,结构更合理,有利于材料电化学性能的提升。当合成前躯体材料超声时间为8h时,复合材料的放电比容量最好,在0.1C的初始放电比容量为327.8 mAh g_-1,均高于未超声的复合材料的265.2 mAh g_-1,1C下循环50圈后放电容量为181.6 mAh g_-1,保持率为84.8%。通过循环伏安法测试和电化学交流阻抗测试,发现超声后的复合材料还原氧化峰电流更大,电荷转移阻抗更小,具有较好的倍率性能。     

冷轧机板形辊包角计算方法

接触式板形辊是目前冷轧生产线中常用的板形测量仪器。分析了冷轧生产线中影响板形辊包角的几个重要因素,针对冷轧生产线的要求和特点,给出了符合实际生产要求的高精度的冷轧机板形辊包角计算方法。实践表明,该方法精度高、实时性好、投资少、适用性强。     

铼钠克G-SPEED数控系统在当代模具及零部件加工中的应用

本文介绍了铼钠克G—SPEED开放式数控系统的功能、特点以及G—SPEED数控系统往现代模具及零部件加工中的应用方法与技巧。包括在CNC自动车床上的应用、在加工小心及磨床上的应用、在鞋揎机上的应用、在四轴及五轴加工、在高光加工上的应用。     

Self-assembly behaviors of thermal- and pH- sensitive magnetic nanocarriers for stimuli-triggered release

In the present work, we prepare thermo- and pH-sensitive polymer-based nanoparticles incorporating with magnetic iron oxide as the remote-controlled, stimuli-response nanocarriers. Well-defined, dual functional tri-block copolymer poly[(acrylic acid)-block-(N-isopropylacrylamide)-block-(acrylic acid)], was synthesized via reversible addition-fragmentation chain-transfer (RAFT) polymerization with S,S′-bis(α,α′-dimethyl-α″-acetic acid)trithiocarbonate (CMP) as a chain transfer agent (CTA). With the aid of using 3-aminopropyltriethoxysilane, the surface-modified iron oxides, Fe₃O₄-NH₂, was then attached on the surface of self-assembled tri-block copolymer micelles via 1-[3-(dimethylamino)propyl]-3-ethylcarbodiimide hydrochloride/N-hydroxysuccinamide (EDC/NHS) crosslinking method in order to furnish not only the magnetic resources for remote control but also the structure maintenance for spherical morphology of our nanocarriers. The nanocarrier was characterized by transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FT-IR), and ultraviolet–visible (UV/Vis) spectral analysis. Rhodamine 6G (R6G), as the modeling drugs, was encapsulated into the magnetic nanocarriers by a simple swelling method for fluorescence-labeling and controlled release monitoring. Biocompatibility of the nanocarriers was studied via 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) assay, which revealed that neither the pristine nanocarrier nor the R6G-loaded nanocarriers were cytotoxic to the normal fibroblast cells (L-929 cells). The in vitro stimuli-triggered release measurement showed that the intelligent nanocarriers were highly sensitive to the change of pH value and temperature rising by the high-frequency magnetic field (HFMF) treatment, which provided the significant potential to apply this technology to biomedical therapy by stimuli-responsive controlled release.     

Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application

This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO₂-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-transistor-1-ReRAM (1T-1R) structure and system-on-chip integration. The modulated shape of the Cu-SiO₂ interface and the thickness of the SiO₂ layer obtained by CDT-based Cu deposition on SiO₂ were confirmed by scanning electron microscopy and atomic force microscopy. The CDT-fabricated Cu/SiO₂-stacked ReRAM exhibited lower operation voltages and more stable data retention characteristics than the control Cu/SiO₂-stacked sample. As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO₂-stacked ReRAM decreased. Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time. Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.